trench power mosfet ? 20 v, single p ? channel, sot ? 23 features ? leading ? 20 v trench for low r ds(on) ? ? 1.8 v rated for low voltage gate drive ? sot ? 23 surface mount for small footprint ? ntrv prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable ? these devices are pb ? free, halogen free/bfr free and are rohs compliant applications ? load/power management for portables ? load/power management for computing ? charging circuits and battery protection maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain ? to ? source voltage v dss ? 20 v gate ? to ? source voltage v gs 8.0 v continuous drain current (note 1) steady state t a = 25 c i d ? 2.4 a t a = 85 c ? 1.7 t 10 s t a = 25 c ? 3.2 power dissipation (note 1) steady state t a = 25 c p d 0.73 w t 10 s 1.25 continuous drain current (note 2) steady state t a = 25 c i d ? 1.8 a t a = 85 c ? 1.3 power dissipation (note 2) t a = 25 c p d 0.42 w pulsed drain current tp = 10 s i dm ? 18 a esd capability (note 3) c = 100 pf, rs = 1500 esd 225 v operating junction and storage temperature t j , t stg ? 55 to 150 c source current (body diode) i s ? 2.4 a single pulse drain ? to ? source avalanche energy (v gs = ? 8 v, i l = ? 1.8 apk, l = 10 mh, r g = 25 ) eas 16 mj lead temperature for soldering purposes (1/8? from case for 10 s) t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. s g d device package shipping ? ordering information p ? channel mosfet sot ? 23 case 318 style 21 tr4 m tr4 = device code m = date code = pb ? free package marking diagram & pin assignment 3 drain 1 gate 2 1 3 2 source ntr4101pt1g sot ? 23 (pb ? free) 3000 / tape & reel v (br)dss r ds(on) typ i d max ? 20 v 70 m @ ? 4.5 v ? 3.2 a ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. (*note: microdot may be in either location) NTRV4101Pt1g sot ? 23 (pb ? free) 3000 / tape & reel ntr4101pt1h 90 m @ ? 2.5 v 112 m @ ? 1.8 v sales@twtysemi.com 1 of 2 http://www.twtysemi.com ntr4101p, NTRV4101P product specification
ty characteristics thermal resistance ratings parameter symbol max unit junction ? to ? ambient ? steady state (note 1) r ja 170 c/w junction ? to ? ambient ? t < 10 s (note 1) r ja 100 junction ? to ? ambient ? steady state (note 2) r ja 300 1. surface ? mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces) 2. surface ? mounted on fr4 board using the minimum recommended pad size. 3. esd rating information: hbm class 0 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain ? to ? source breakdown voltage (note 4) (v gs = 0 v, i d = ? 250 a) v (br)dss ? 20 v zero gate voltage drain current (note 4) (v gs = 0 v, v ds = ? 16 v) i dss ? 1.0 a gate ? to ? source leakage current (v gs = 8.0 v, v ds = 0 v) i gss 100 na gate threshold voltage (note 4) (v gs = v ds , i d = ? 250 a) v gs(th) ? 0.4 ? 0.72 ? 1.2 v drain ? to ? source on ? resistance (v gs = ? 4.5 v, i d = ? 1.6 a) (v gs = ? 2.5 v, i d = ? 1.3 a) (v gs = ? 1.8 v, i d = ? 0.9 a) r ds(on) 70 90 112 85 120 210 m forward transconductance (v ds = ? 5.0 v, i d = ? 2.3 a) g fs 7.5 s charges, capacitances & gate resistance input capacitance (v gs = 0 v, f = 1 mhz, v ds = ? 10 v) c iss 675 pf output capacitance c oss 100 reverse transfer capacitance c rss 75 total gate charge (v gs = ? 4.5 v, v ds = ? 10 v, i d = ? 1.6 a) q g(tot) 7.5 8.5 nc gate ? to ? source gate charge (v ds = ? 10 v, i d = ? 1.6 a) q gs 1.2 nc gate ? to ? drain ?miller? charge (v ds = ? 10 v, i d = ? 1.6 a) q gd 2.2 nc gate resistance r g 6.5 switching characteristics (note 5) turn ? on delay time (v gs = ? 4.5 v, v ds = ? 10 v, i d = ? 1.6 a, r g = 6.0 ) t d(on) 7.5 ns rise time t r 12.6 turn ? off delay time t d(off) 30.2 fall time t f 21.0 drain ? source diode characteristics forward diode voltage (v gs = 0 v, i s = ? 2.4 a) v sd ? 0.82 ? 1.2 v reverse recovery time (v gs = 0 v, di sd /dt = 100 a/ s, i s = ? 1.6 a) t rr 12.8 15 ns charge time t a 9.9 ns discharge time t b 3.0 ns reverse recovery charge q rr 1008 nc 4. pulse test: pulse width 300 s, duty cycle 2%. 5. switching characteristics are independent of operating junction temperature. ntr4101p, NTRV4101P product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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